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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU506DF www..com DESCRIPTION *With TO-220Fa package *High voltage *High-speed switching *Built-in damper diode. APPLICATIONS *Horizontal deflection circuits of colour TV receivers. *Line-operated switch-mode applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current Base current(peak) Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 6 5 8 3 5 20 150 -65-150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU506DF CHARACTERISTICS www..com Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Collector cut-off current Emitter cut-off current Diode forward voltage CONDITIONS IC=100mA; IB=0,L=25mH IC=3A; IB=1.33A IC=3A; IB=1.33A IC=0.1A ; VCE=5V IC=3A ; VCE=5V VCE=rated; VBE=0 Tj=125 VEB=6V; IC=0 IF=3A; 1.5 6 2.25 0.5 1.0 200 2.2 mA mA V 13 MIN 700 1.0 1.3 30 TYP. MAX UNIT V V V SYMBOL VCEO(SUS) VCEsat VBEsat hFE-1 hFE-2 ICES IEBO VF Switching times ts tf Storage time Fall time 6.5 0.7 s s ICM = 3 A; IB(end) = 1A LB = 12H 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www..com BU506DF Fig.2 Outline dimensions (unindicated tolerance: 0.15 mm) 3 |
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